article · 1984
GaAs heterojunction bipolar 1K gate array
Hen Yuan, W. V. McLevige, Hung Dah Shih, Ashley Hearn
Cited by 10Abstract and details only
Abstract
This report will discuss the design, fabrication and performance of a 1K heterojunction I <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> L gate array with a base bar size of 3.55 × 3.80mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , containing 1024 internal gates, 64 programmable I/O buffers and 8 pads for the power supply. For general circuit applications the layout provides 300 global wire channels: 150 each in the horizontal and vertical directions.
Cite this paper
Yuan, H., McLevige, W. V., Shih, H. D., & Hearn, A. (1984). GaAs heterojunction bipolar 1K gate array. https://doi.org/10.1109/isscc.1984.1156638
Yuan, Hen, et al. “GaAs heterojunction bipolar 1K gate array.” 1984, pp. 42–43, https://doi.org/10.1109/isscc.1984.1156638.
Yuan, Hen, W. V. McLevige, Hung Dah Shih, and Ashley Hearn. 1984. “GaAs heterojunction bipolar 1K gate array.” https://doi.org/10.1109/isscc.1984.1156638.
Yuan, H. et al. (1984) ‘GaAs heterojunction bipolar 1K gate array’. Available at: https://doi.org/10.1109/isscc.1984.1156638.
@article{yuan1984gaas,
title = {{GaAs heterojunction bipolar 1K gate array}},
author = {Yuan, Hen and McLevige, W. V. and Shih, Hung Dah and Hearn, Ashley},
pages = {42--43},
year = {1984},
doi = {10.1109/isscc.1984.1156638}
}Made from the index record. Check names, capitalisation and page numbers against the paper. Need another style? AI for Research has over 10,000.