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article · IEEE Transactions on Semiconductor Manufacturing · 2015

Development of an Ultralong Ultralow n-Loop for Wire Bonding

Fuliang Wang, Yun Chen, Lei Han

Cited by 4Abstract and details only

Abstract

In this paper, we describe an innovative method to form an ultralong ultralow loop for wire bonding. A resister was used to form kinks and simplify the capillary trace, which yielded a loop-like “n”-shape with two kinks immediately above the first and second bonds that can support the entire long-span loop. A 3-D finite element model was developed to simulate the n-loop formation, and the loop profiles of an n-loop, M-loop, and standard loop were compared. In this paper, we show that this novel n-loop can almost halve the looping time compared to that for the M-loop; and the n-loop can avoid wire sag for a 5000-μ m-long span. Furthermore, the loop height and wire verticality near the second bond can be modified by regulating the horizontal and vertical positions of the resister.

Cite this paper

APA 7

Wang, F., Chen, Y., & Han, L. (2015). Development of an Ultralong Ultralow n-Loop for Wire Bonding. IEEE Transactions on Semiconductor Manufacturing, 28(1), 50–54. https://doi.org/10.1109/tsm.2014.2381219

MLA 9

Wang, Fuliang, et al. “Development of an Ultralong Ultralow n-Loop for Wire Bonding.” IEEE Transactions on Semiconductor Manufacturing, vol. 28, no. 1, 2015, pp. 50–54, https://doi.org/10.1109/tsm.2014.2381219.

Chicago

Wang, Fuliang, Yun Chen, and Lei Han. 2015. “Development of an Ultralong Ultralow n-Loop for Wire Bonding.” IEEE Transactions on Semiconductor Manufacturing 28 (1): 50–54. https://doi.org/10.1109/tsm.2014.2381219.

Harvard

Wang, F., Chen, Y. and Han, L. (2015) ‘Development of an Ultralong Ultralow n-Loop for Wire Bonding’, IEEE Transactions on Semiconductor Manufacturing, 28(1), pp. 50–54. Available at: https://doi.org/10.1109/tsm.2014.2381219.

BibTeX
@article{wang2015development,
  title = {{Development of an Ultralong Ultralow n-Loop for Wire Bonding}},
  author = {Wang, Fuliang and Chen, Yun and Han, Lei},
  journal = {IEEE Transactions on Semiconductor Manufacturing},
  volume = {28},
  number = {1},
  pages = {50--54},
  year = {2015},
  doi = {10.1109/tsm.2014.2381219}
}

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