Behaviour of logic gates fabricated on Si/SiGe MODFET technology

Juncu, V., Kallfass, I., Sloan, R., & Hatfield, J. (2004). Behaviour of logic gates fabricated on Si/SiGe MODFET technology. Electronics Letters, 40(12), 772–774. https://doi.org/10.1049/el:20040494

Juncu, V.D., et al. “Behaviour of logic gates fabricated on Si/SiGe MODFET technology.” Electronics Letters, vol. 40, no. 12, 2004, pp. 772–74, https://doi.org/10.1049/el:20040494.

Juncu, V.D., Ingmar Kallfass, Raymond Sloan, and J.V. Hatfield. 2004. “Behaviour of logic gates fabricated on Si/SiGe MODFET technology.” Electronics Letters 40 (12): 772–74. https://doi.org/10.1049/el:20040494.

Juncu, V. et al. (2004) ‘Behaviour of logic gates fabricated on Si/SiGe MODFET technology’, Electronics Letters, 40(12), pp. 772–774. Available at: https://doi.org/10.1049/el:20040494.

@article{juncu2004behaviour,
  title = {{Behaviour of logic gates fabricated on Si/SiGe MODFET technology}},
  author = {Juncu, V.D. and Kallfass, Ingmar and Sloan, Raymond and Hatfield, J.V.},
  journal = {Electronics Letters},
  volume = {40},
  number = {12},
  pages = {772--774},
  year = {2004},
  doi = {10.1049/el:20040494}
}