conference paper · IEEE International Conference on Microelectronics (MIEL) · 2002

Symbolic function extraction and fault modelling of MOS circuits

Predrag M. Petković, D. Milovanovic, Vanco B. Litovski

Cited by 0Abstract and details only

Abstract

This paper presents a new method for fault modelling of CMOS combinational circuits at the transistor level. Every transistor is replaced with a conductance controlled by the gate logic state. The specific advantage of the method is use of a symbolic simulator for circuit function extraction. This function is referred as the Transistor Logic Conductance Function (TLCF). Starting from a known TLCF a simple set of rules is used for output state determination. The method is suitable for multiple fault model generation thanks to the fact that only one symbolic analysis of a circuit is sufficient for modelling different stuck-open, stuck-short and stuck-at faults of a logic gate.

Cite this paper

APA 7

Petković, P. M., Milovanovic, D., & Litovski, V. B. (2002). Symbolic function extraction and fault modelling of MOS circuits. IEEE International Conference on Microelectronics (MIEL), 2, 473–478. https://doi.org/10.1109/icmel.1995.500912

MLA 9

Petković, Predrag M., et al. “Symbolic function extraction and fault modelling of MOS circuits.” IEEE International Conference on Microelectronics (MIEL), vol. 2, 2002, pp. 473–78, https://doi.org/10.1109/icmel.1995.500912.

Chicago

Petković, Predrag M., D. Milovanovic, and Vanco B. Litovski. 2002. “Symbolic function extraction and fault modelling of MOS circuits.” IEEE International Conference on Microelectronics (MIEL) 2: 473–78. https://doi.org/10.1109/icmel.1995.500912.

Harvard

Petković, P.M., Milovanovic, D. and Litovski, V.B. (2002) ‘Symbolic function extraction and fault modelling of MOS circuits’, IEEE International Conference on Microelectronics (MIEL), 2, pp. 473–478. Available at: https://doi.org/10.1109/icmel.1995.500912.

BibTeX

@article{petkovic2002symbolic,
  title = {{Symbolic function extraction and fault modelling of MOS circuits}},
  author = {Petković, Predrag M. and Milovanovic, D. and Litovski, Vanco B.},
  journal = {IEEE International Conference on Microelectronics (MIEL)},
  volume = {2},
  pages = {473--478},
  year = {2002},
  doi = {10.1109/icmel.1995.500912}
}

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