article · 2010

Carbon Nanotube Memory Elements

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Abstract

Carbon nanotubes are among the most cited prototypical materials for nanoelectronics and information storage devices, a dominant position that originates from their intrinsic structural and electronic properties. In this chapter we review the developments in memory elements that directly exploit the unique properties of carbon nanotubes. Fundamental operational principles and characteristics are examined for the different types of carbon nanotube-based memory devices along with the current status of experimental fabrication and scalability. These include memory elements based on carbon nanotube field-effect transistors (CNFET), nanoelectromechanical systems (NEMS), and electromigration. Many of these devices show tremendous promise for providing enhanced densities, lower power requirements, more efficient read/write processes, and non-volatility of data.

Cite this paper

APA 7

Meunier, V., & Sumpter, B. G. (2010). Carbon Nanotube Memory Elements. https://doi.org/10.1201/9781420075519-5

MLA 9

Meunier, Vincent, and Bobby G. Sumpter. “Carbon Nanotube Memory Elements.” 2010, https://doi.org/10.1201/9781420075519-5.

Chicago

Meunier, Vincent, and Bobby G. Sumpter. 2010. “Carbon Nanotube Memory Elements.” https://doi.org/10.1201/9781420075519-5.

Harvard

Meunier, V. and Sumpter, B.G. (2010) ‘Carbon Nanotube Memory Elements’. Available at: https://doi.org/10.1201/9781420075519-5.

BibTeX

@article{meunier2010carbon,
  title = {{Carbon Nanotube Memory Elements}},
  author = {Meunier, Vincent and Sumpter, Bobby G.},
  year = {2010},
  doi = {10.1201/9781420075519-5}
}

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