book chapter · Springer series in advanced microelectronics · 2011

Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM

Cited by 1Abstract and details only

Abstract

The index has no abstract for this paper. The publisher’s page may have one.

Cite this paper

Ibe, E., & Osada, K. (2011). Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM. Springer series in advanced microelectronics, 89–124. https://doi.org/10.1007/978-3-642-19568-6_6

MLA 9

Ibe, Eishi, and Kenichi Osada. “Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM.” Springer series in advanced microelectronics, 2011, pp. 89–124, https://doi.org/10.1007/978-3-642-19568-6_6.

Chicago

Ibe, Eishi, and Kenichi Osada. 2011. “Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM.” Springer series in advanced microelectronics: 89–124. https://doi.org/10.1007/978-3-642-19568-6_6.

Harvard

Ibe, E. and Osada, K. (2011) ‘Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM’, Springer series in advanced microelectronics, pp. 89–124. Available at: https://doi.org/10.1007/978-3-642-19568-6_6.

BibTeX

@incollection{ibe2011reliable,
  title = {{Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM}},
  author = {Ibe, Eishi and Osada, Kenichi},
  booktitle = {Springer series in advanced microelectronics},
  pages = {89--124},
  year = {2011},
  doi = {10.1007/978-3-642-19568-6_6}
}

Made from the index record. Check names, capitalisation and page numbers against the paper. Need another style? AI for Research has over 10,000.