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About 8,519 papers for “Flash memory”

Flash Memory

Taku Ogura · Analog circuits and signal processing/Analog circuits and signal processing series · 2010

Cited by 0

Flash Memory

2014

� demo uses a resistance to simulate the specimen ◆ Temperature display ◆ Battery voltage monitoring � IAP stores test data ◆ IAP reads and writes data, replaces the external EEPROM, directly stores the test data in the Flash Memory ◆ Large Flash Memory capacity, allowing for more flexible test data storage � DAC Voice Function ‒ demo has optional voice free function Application AreasBlock Diagram C-type LCD OPA1 ADC I/O 32kHz RTC

Cited by 0

Flash Memory Design

Journal of Electrical Electronics Engineering · 2024

In this paper, I introduce a new design for Flash Memory Device. In this design, an attempt is made to use the existing ICs of the market

Cited by 0Open access

Flash Memory Devices

Cristian Zambelli, Rino Micheloni · 2022

Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture.&nbsp;<span id="OBJ_PREFIX_DWT238_com_zimbra_date" class="Object" role="link"><span id="OBJ_PREFIX_DWT243_com_zimbra_date" class="Object" role="link">Today</span></span>&nbsp;&ldquo;3D&rdquo; means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement.

Cited by 0Open access

Flash memory complexity

T. Trexler · IEEE Instrumentation & Measurement Magazine · 2005

Driven by the demand for more versatile personal electronic devices such as cellular phones and handheld computers, flash memory has advanced rapidly to higher volume density and performance levels. Today, semiconductor manufacturers find a growing opportunity for more advanced flash memories delivered either as standalone flash devices; embedded as cores with logic in single-chip devices; or packaged as stacked dice with microcontrollers, logic, or static RAM. For flash manufacturers, however, success in these highly competitive markets requires tight control over the cost of test, despite rising device complexity. As flash memory grows in size, speed, and complexity, manufacturers are seeking more cost-effective, single-insertion test solutions capable of addressing resulting test challenges. With the development of new test architectures, manufacturers can more efficiently address emerging flash complexity using cost-effective, next-generation test platforms.

Cited by 2

FLASH MEMORY CARDS

Tryndiuk V.V. · Electronic Institutional Repository of the National Aviation University of Ukraine (National Aviation University, Ukraine) · 2017

Cited by 0

Embedded Flash Memory

C. Kuo, Ko‐Min Chang · 2007

This chapter contains sections titled: Introduction Embedded Flash Versus Stand-Alone Flash Memory Embedded Flash Memory Applications Embedded Flash Memory Cells Embedded Flash Memory Design References

Cited by 0

Nanographene Flash Memory

Jianling Meng, Rong Yang, Guangyu Zhang · 2024

Nanomaterials have novel physical and chemical properties as a result of the size-confinement effect. Metal- and semiconductor-based nanocrystals have been proved to be promising floating-gate charge-trapping media for nonvolatile flash memory. Miniaturization of memory devices requires one to reduce the size of such materials incessantly. However, due to the quantized energy levels associated with a size below the quantum limit, the performance of semiconductor nanocrystals is degraded. The instability and the fabrication process incompatibility also limit the development of metal nanocrystals for floating-gate memory. Newly emerging graphene has attracted much research interest for flash memory materials. Compared with conventional materials, atomic-layer-thick graphene is chemically inert and thermally stable; meanwhile it has high electrical conductivity and high carrier mobility and is compatible with the conventional semiconductor fabrication processing. In this chapter, we give an overview of the synthesis, properties, and memory device applications of graphene and related graphene nanosheets. The promising findings as well as the future potential directions of this research field have been highlighted.

Cited by 0

Graphene Flash Memory

Augustin J. Hong, Emil B. Song, Hyung Suk Yu et al. · ACS Nano · 2011

Graphene's single atomic layer of sp(2) carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM). GFM has the potential to exceed the performance of current flash memory technology by utilizing the intrinsic properties of graphene, such as high density of states, high work function, and low dimensionality. To this end, we have grown large-area graphene sheets by chemical vapor deposition and integrated them into a floating gate structure. GFM displays a wide memory window of ∼6 V at significantly low program/erase voltages of ±7 V. GFM also shows a long retention time of more than 10 years at room temperature. Additionally, simulations suggest that GFM suffers very little from cell-to-cell interference, potentially enabling scaling down far beyond current state-of-the-art flash memory devices.

Cited by 255