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About 10,000 papers for “Random access memory”
Ren, Ling, Ph. D. Massachusetts Institute of Technology · DSpace@MIT (Massachusetts Institute of Technology) · 2014
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
Cited by 0Open access
Tristan Murail · 1984
Reunit : Le reveil des machines ; Sept degres du sommeil ; Atlantys ; Malediction ; Orchestre imaginaires ; Vampyr ! ; Souffle des elements ; Vision de la cite interdite ; Une depression dans le continuum. - La guitare est electrique. - Creation : 4 octobre 1984, Festival de Metz (numeros 2, 3, 6, 8) et 8 juillet 1987 Biennale d'Helsinki (numeros 1, 4, 5, 7)., Ensemble d'instruments electroniques de l'Itineraire
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Martin H. Weik · 2000
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Oleshkevich, A. A. · Repository of Belarusian National Technical University (Belarusian National Technical University) · 2022
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Eloy, Christian · University of North Texas Digital Library (University of North Texas) · 1999
Recording of Christian Eloy's Random access memory. This work is a journey through the electro-acoustic memory of this first half-century and acts as a tribute to the 50 years since Pierre Schaeffer made his first explorations into the audio world. The sound material in this recording was made up of various fragments from different composers.
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Claire Wilkinson · The New Scientist · 2006
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SpringerReference · 2011
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Pinklogik · Bulletin of Miscellaneous Information (Royal Gardens Kew) · 2012
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Development Center, Griffiss Afb, Ny K Wd et al. · 1965
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National Cancer Institute · Definitions · 2020
A data storage device for which the order of access to different locations does not affect the speed of access. RAM can be both read from and written to by the computer, but its contents are lost when the power is switched off.
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Sushil Jajodia, Pierangela Samarati, Moti Yung · 2025
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Demetri Psaltis · 1997
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Biophysical Instrumentation Journal · OSF Preprints (OSF Preprints) · 2019
Document scanning and optical character recognition: O.V. Gradov's Group [Biophysical Instrumentation Group], P.L. Alexandrov. Gradov's Group Project: Russian CAMAC Society.
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Vittorio Giovannetti, Seth Lloyd, Lorenzo Maccone · Physical Review Letters · 2008
A random access memory (RAM) uses n bits to randomly address N=2(n) distinct memory cells. A quantum random access memory (QRAM) uses n qubits to address any quantum superposition of N memory cells. We present an architecture that exponentially reduces the requirements for a memory call: O(logN) switches need be thrown instead of the N used in conventional (classical or quantum) RAM designs. This yields a more robust QRAM algorithm, as it in general requires entanglement among exponentially less gates, and leads to an exponential decrease in the power needed for addressing. A quantum optical implementation is presented.
Cited by 886Open access
Katti, Romney R., Wu, Jiin-Chuan, Stadler, Henry L. · NASA Technical Reports Server (NASA)
A nonvolatile magnetic random access memory can be achieved by an array of magnet-Hall effect (M-H) elements. The storage function is realized with a rectangular thin-film ferromagnetic material having an in-plane, uniaxial anisotropy and inplane bipolar remanent magnetization states. The thin-film magnetic element is magnetized by a local applied field, whose direction is used to form either a 0 or 1 state. The element remains in the 0 or 1 state until a switching field is applied to change its state. The stored information is detcted by a Hall-effect sensor which senses the fringing field from the magnetic storage element. The circuit design for addressing each cell includes transistor switches for providing a current of selected polarity to store a binary digit through a separate conductor overlying the magnetic element of the cell. To read out a stored binary digit, transistor switches are employed to provide a current through a row of Hall-effect sensors connected in series and enabling a differential voltage amplifier connected to all Hall-effect sensors of a column in series. To avoid read-out voltage errors due to shunt currents through resistive loads of the Hall-effect sensors of other cells in the same column, at least one transistor switch is provided between every pair of adjacent cells in every row which are not turned on except in the row of the selected cell.
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SpringerReference · 2011
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Dmytro Apalkov, B. Diény, J. M. Slaughter · Proceedings of the IEEE · 2016
In this paper, a review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on spin-transfer torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.
Cited by 529Open access
Biophysical Instrumentation Journal · OSF Preprints (OSF Preprints) · 2019
Document scanning and optical character recognition: O.V. Gradov's Group [Biophysical Instrumentation Group], P.L. Alexandrov. Gradov's Group Project: Russian CAMAC Society.
Cited by 0Open access
2011
Cited by 5
P. Lakshmi Priya, R. Raj Kumar, Tamil Nadu Chennai · 2015
Power consumption is becoming one of the most important constraints in the VLSI field in nano-meter scale technologies. Especially, as a transistor for supply voltage and threshold voltage are scaled down, leakage energy consumption is increased even when the transistor is not switching. This paper proposes to use various techniques in reducing the static power as well as dynamic power consumption by using different cache techniques and various types of RAM. Keywords:- Caches, instruction caches, loop caches, low power, power gating, spin-transfer torque RAM (STT-RAM), power efficiency, static power and dynamic power.
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