article · 2002

Ultra-thin RF LDMOS Power Transistors

Juan A. Herbsommer, H. Safar, W. C. Brown, P. L. Gammel, O. Lopez, G. Terefenko

Cited by 5Abstract and details only

Abstract

We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a proprietary process, we fabricated such devices with a thickness as reduced as 40μm. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.

Cite this paper

APA 7

Herbsommer, J. A., Safar, H., Brown, W. C., Gammel, P. L., Lopez, O., & Terefenko, G. (2002). Ultra-thin RF LDMOS Power Transistors. https://doi.org/10.1109/euma.2002.339276

MLA 9

Herbsommer, Juan A., et al. “Ultra-thin RF LDMOS Power Transistors.” vol. 57, 2002, pp. 1–4, https://doi.org/10.1109/euma.2002.339276.

Chicago

Herbsommer, Juan A., H. Safar, W. C. Brown, P. L. Gammel, O. Lopez, and G. Terefenko. 2002. “Ultra-thin RF LDMOS Power Transistors.” https://doi.org/10.1109/euma.2002.339276.

Harvard

Herbsommer, J.A. et al. (2002) ‘Ultra-thin RF LDMOS Power Transistors’. Available at: https://doi.org/10.1109/euma.2002.339276.

BibTeX

@article{herbsommer2002ultra,
  title = {{Ultra-thin RF LDMOS Power Transistors}},
  author = {Herbsommer, Juan A. and Safar, H. and Brown, W. C. and Gammel, P. L. and Lopez, O. and Terefenko, G.},
  volume = {57},
  pages = {1--4},
  year = {2002},
  doi = {10.1109/euma.2002.339276}
}

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