article · Journal of Electronics (China) · 2006

0.18μm CMOS, monolithic MSTP ASIC

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Abstract

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Cite this paper

Wang, P., Jin, D., & Zeng, L. (2006). 0.18μm CMOS, monolithic MSTP ASIC. Journal of Electronics (China), 23(6), 948–951. https://doi.org/10.1007/s11767-006-0026-4

MLA 9

Wang, Peng, et al. “0.18μm CMOS, monolithic MSTP ASIC.” Journal of Electronics (China), vol. 23, no. 6, 2006, pp. 948–51, https://doi.org/10.1007/s11767-006-0026-4.

Chicago

Wang, Peng, Depeng Jin, and Lieguang Zeng. 2006. “0.18μm CMOS, monolithic MSTP ASIC.” Journal of Electronics (China) 23 (6): 948–51. https://doi.org/10.1007/s11767-006-0026-4.

Harvard

Wang, P., Jin, D. and Zeng, L. (2006) ‘0.18μm CMOS, monolithic MSTP ASIC’, Journal of Electronics (China), 23(6), pp. 948–951. Available at: https://doi.org/10.1007/s11767-006-0026-4.

BibTeX

@article{wang200618m,
  title = {{0.18μm CMOS, monolithic MSTP ASIC}},
  author = {Wang, Peng and Jin, Depeng and Zeng, Lieguang},
  journal = {Journal of Electronics (China)},
  volume = {23},
  number = {6},
  pages = {948--951},
  year = {2006},
  doi = {10.1007/s11767-006-0026-4}
}

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