A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer

Li, Q., Yi, W., Zhang, F., Li, H., Xiao, G., Chen, Y., & Fu, T. (2018). A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer. Results in Physics, 10, 46–54. https://doi.org/10.1016/j.rinp.2018.05.015

Li, Qi, et al. “A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer.” Results in Physics, vol. 10, 2018, pp. 46–54, https://doi.org/10.1016/j.rinp.2018.05.015.

Li, Qi, Wen Yi, Fabi Zhang, Haiou Li, Gongli Xiao, Yonghe Chen, and Tao Fu. 2018. “A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer.” Results in Physics 10: 46–54. https://doi.org/10.1016/j.rinp.2018.05.015.

Li, Q. et al. (2018) ‘A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer’, Results in Physics, 10, pp. 46–54. Available at: https://doi.org/10.1016/j.rinp.2018.05.015.

@article{li2018novel,
  title = {{A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer}},
  author = {Li, Qi and Yi, Wen and Zhang, Fabi and Li, Haiou and Xiao, Gongli and Chen, Yonghe and Fu, Tao},
  journal = {Results in Physics},
  volume = {10},
  pages = {46--54},
  year = {2018},
  doi = {10.1016/j.rinp.2018.05.015}
}