article · Rare & Special e-Zone (The Hong Kong University of Science and Technology) · 2000
120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
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(2000). 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit. Rare & Special e-Zone (The Hong Kong University of Science and Technology).
“120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit.” Rare & Special e-Zone (The Hong Kong University of Science and Technology), 2000.
2000. “120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit.” Rare & Special e-Zone (The Hong Kong University of Science and Technology).
(2000) ‘120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit’, Rare & Special e-Zone (The Hong Kong University of Science and Technology).
@article{anon2000interdigitated,
title = {{120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit}},
journal = {Rare & Special e-Zone (The Hong Kong University of Science and Technology)},
year = {2000}
}Made from the index record. Check names, capitalisation and page numbers against the paper. Need another style? AI for Research has over 10,000.