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About 10,000 papers for “memory elements”

Elements of Memory

Barnhart, Erin Lynn · VTechWorks (Virginia Tech) · 2014

I set out to create a house to nestle within the rugged landscape of West Virginia; a dwelling that would suit those living in rural villages and up remote hollows. This place is created by a retaining wall to hold back the slope and a generous roof to shelter from the weather. The structure is divided into two seemingly equal halves, one half being enclosed to form the house, the other remaining for outdoor space. Terrain and orientation were considered, giving rise to three variations of the house. Within each house, memories of my childhood surroundings are recognized and celebrated.

Cited by 0Open access

Elements of Memory

Erin Lynn Barnhart · VTechWorks (Virginia Tech) · 2010

I set out to create a house to nestle within the rugged landscape of West Virginia; a dwelling that would suit those living in rural villages and up remote hollows. This place is created by a retaining wall to hold back the slope and a generous roof to shelter from the weather. The structure is divided into two seemingly equal halves, one half being enclosed to form the house, the other remaining for outdoor space. Terrain and orientation were considered, giving rise to three variations of the house. Within each house, memories of my childhood surroundings are recognized and celebrated.

Cited by 0Open access

Elements of Memory

Erin Lynn Barnhart · 2010

I set out to create a house to nestle within the rugged landscape of West Virginia; a dwelling that would suit those living in rural villages and up remote hollows. This place is created by a retaining wall to hold back the slope and a generous roof to shelter from the weather. The structure is divided into two seemingly equal halves, one half being enclosed to form the house, the other remaining for outdoor space. Terrain and orientation were considered, giving rise to three variations of the house. Within each house, memories of my childhood surroundings are recognized and celebrated. Elements of Memory Erin Barnhart Acknowledgements I would like to thank my parents, brother, Andrew, husband, Clayton and classmates. Scott for all his advice, encouragement, and voice of reason. Bill and Kay for their guidance. To Freeman and Morphew, for the foundation they provided and their confidence. To my grandparents, Herb and Edith Smith, for their love, unwavering belief in me, and for the photographs in this book that they cherished and passed onto me.

Cited by 0

Carbon Nanotube Memory Elements

Vincent Meunier, Bobby G. Sumpter · 2010

Carbon nanotubes are among the most cited prototypical materials for nanoelectronics and information storage devices, a dominant position that originates from their intrinsic structural and electronic properties. In this chapter we review the developments in memory elements that directly exploit the unique properties of carbon nanotubes. Fundamental operational principles and characteristics are examined for the different types of carbon nanotube-based memory devices along with the current status of experimental fabrication and scalability. These include memory elements based on carbon nanotube field-effect transistors (CNFET), nanoelectromechanical systems (NEMS), and electromigration. Many of these devices show tremendous promise for providing enhanced densities, lower power requirements, more efficient read/write processes, and non-volatility of data.

Cited by 0

Memory computing based on thermal memory elements

Olga V. Volodina, А. А. Скворцов, Vladimir K. Nikolaev · E3S Web of Conferences · 2023

The article analyses the possibility of using elements of thermal memory to create a system that allows to perform calculations in memory. Such a computing system is built on devices that are used simultaneously for storing input data, performing a logical operation, and storing the output result. The authors conclude that it is possible to emulate this behaviour by using thermal memory elements with dielectric (SiO2) by a layer of thermal insulation. Special attention is paid to the logic gates of computing systems and their realisation on the basis of thermal memory elements. Simulation modelling of the work of such elements is carried out on the ANSYS Workbanch platform using the Transient Thermal module for non-stationary thermal calculations. On the basis of the modelling, the possibility of creating two basic logic gates “AND” and “OR” is established. The results can be used to create more integrated structures, such as artificial neural networks.

Cited by 1Open access

Memory monument from prefabricated elements

Růžička, Martin · Brno University of Technology Digital Library (Brno University of Technology) · 2014

Bakalářská práce se zabývá návrhem železobetonového památníku. Památník se skládá z 11 prefabrikovaných segmentů umístěných od sebe v pravidelných rozestupech. Segmenty mají stejný vnější rozměr, ale liší se velikostí vnitřních otvorů. Pro osobu stojící uvnitř tak vytváří dynamický interiér. Segmenty jsou vetknuty do prefabrikovaného základu tvaru hřebene. Cílem této práce je návrh každého segmentu a základu stavby. Součástí jsou taktéž výkresy výztuže vybraných segmentů a výztuže základu, výkres dobetonávky a výkres tvaru segmentů.

Cited by 0

Electrosynthesis of molecular memory elements

Pradeep Sachan, Anwesha Mahapatra, Lalith Adithya Sai Channapragada et al. · Chemical Science · 2025

The increasing pace of computing beyond Moore's law scaling and the von Neumann bottleneck necessitates a universal memory solution that offers high speed, low-power consumption, scalability, and non-volatility, such as resistive switching memristors. However, inconsistencies in the homogeneity and uniformity of surface coverage for switching materials on various electrode substrates, especially those prepared <i>via</i> non-covalent methods, result in reduced interfacial stability, thus yielding poor device reproducibility. Electrosynthesis, a reliable and versatile technique for creating covalently bound molecular films on electrode surfaces, enables controlled deposition of large-area, high-quality molecular thin films with nanoscale thicknesses, making it an ideal platform for scalable nanoelectronics. This study explores the electrochemical grafting of two distinct ruthenium complexes: structurally symmetrical [Ru(tpy-ph-NH<sub>2</sub>)<sub>2</sub>](2PF<sub>6</sub>)] (1) and asymmetrical [Ru(tpy-ph-NH<sub>2</sub>)(naptpy)](2PF<sub>6</sub>)] (2), for the fabrication of large-area, two-terminal molecular junctions intended for resistive switching memory applications. A comparative analysis reveals that 2 exhibits relatively superior memory performance to 1, attributed to its donor-acceptor configuration playing a crucial role. Stable vertical molecular junctions with the configuration ITO/Ru complex<sub>24nm</sub>/Al were fabricated, and electrical measurements were carried out to understand the enhanced switching characteristics. The redox-active molecular devices demonstrate non-volatile resistive switching behavior within a ±3.0 V operation window, featuring a large <i>I</i> <sub>ON</sub>/<i>I</i> <sub>OFF</sub> ratio (∼10<sup>3</sup>), a high power consumption ratio (SET/RESET = 25.5 mJ/75000 mJ), and switching time (SET/RESET = 56/24 ms). Synapse-like potentiation and convolutional neural network simulation were performed, highlighting the potential of these devices for in-memory data processing applications.

Cited by 3Open access

Photoconductors as dynamic memory elements

V. P. McGinn, Bailey Smith · Microwave and Optical Technology Letters · 1992

Abstract Industrial photoconductors are doped for large quantum yields. The resulting improvement in resistive dynamic range is accompanied by photocarrier traps. These traps enhance device hysterisis (or memory). The reduction in response speed mimics electrical reactance effects. This light history may be exploited in the construction of low‐frequency filters and oscillators.

Cited by 0

Fractional-order circuit elements with memory

Ivo Petráš, YangQuan Chen · 2012

This paper deals with the fractional-order memristive, memcapacitative, and meminductive systems and their utilization in design of the new circuits with memory. We provide a mathematical description of such systems by using a technique of the fractional calculus. Some possible applications of “mem” systems are mentioned in article as well.

Cited by 27

Single Electron Encoded SET Memory Elements

Casper Lageweg, Sorin Cotofana, Stamatis Vassiliadis · 2000

Abstract — The ability to control the transport of individual electrons in Single Electron Tunneling (SET) based circuits creates the conditions for Single Electron Encoded Logic (SEEL). The logic values ¢ and £ of SEEL gates are encoded as a net charge of ¢ or £ electron charges. This paper investigates the implementation of SEEL memory elements based on SEEL Boolean logic gates. After the introduction of the SEEL Boolean logic gates that serve as basic building blocks, SEEL implementations of the RS-latch, D-latch and positive edge-triggered D flip-flop are proposed and verified by simulation. Finally, the area, switching delay and power consumption of the memory elements are compared with CMOS-like SET transistor based implementations. The comparison indicates that the total circuit area is comparable, but the SEEL Boolean gate based implementations reduce both delay and power consumption by a factor of ¤.

Cited by 0

POLYCRYSTALLINE FERRO-ELECTRIC MULTIREMANENCE MEMORY ELEMENTS

C. E. Land, G.W. Smith, I D McKinney · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1964

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Cited by 2Open access